preliminary datasheet LPM3401 LPM3401 C 00 version 1.0 datasheet dec.- 2011 www.lowpowersemi.com page 1 of 6 LPM3401 - -20v/4.2a p-channel enhancem ent mode field effect transistor general description the LPM3401 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. ordering information LPM3401 f: pb-free package type b3: sot23 features -20v/-4.2a,r dc(on) 54m ? (typ.)@v gs =-2.5v -20v/-3.0a,r dc(on) 60m ? (typ.)@v gs =-4.5v super high density cell design for extremely low r dc(on) sot23 package applications ? portable media players ? cellular and smart mobile phone ? lcd ? dsc sensor ? wireless card marking information xxx : the production cycle and the batch. pin configurations device marking package shipping LPM3401b3f a1xxx sot23-3 3k/reel sot23l(top view)
preliminary datasheet LPM3401 LPM3401 C 00 version 1.0 datasheet dec.- 2011 www.lowpowersemi.com page 2 of 6 functional pin description
preliminary datasheet lpm 3401 LPM3401 C 00 version 1.0 datasheet dec.-2011 www.lowpowersemi.com page 3 of 6
preliminary datasheet lpm 3401 LPM3401 C 00 version 1.0 datasheet dec.-2011 www.lowpowersemi.com page 4 of 6
preliminary datasheet lpm 3401 LPM3401 C 00 version 1.0 datasheet dec.-2011 www.lowpowersemi.com page 5 of 6
preliminary datasheet LPM3401 LPM3401 C 00 version 1.0 datasheet dec.- 2011 www.lowpowersemi.com page 6 of 6 packaging information
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